NON-VOLATILE SEMICONDUCTOR MEMORY, AND ITS PROGRAMMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a programming method for a non-volatile semiconductor memory in which program disturbance phenomenon owing to a parasitic MOS transistor can be prevented. SOLUTION: A non-volatile semiconductor memory is constituted of a plurality of memory cell strings connected to a plurality of bit lines and comprising a plurality of memory cell transistors of which gates are connected to a plurality of word lines, and a plurality of registers corresponding to bit lines. A programming method comprises a stage in which first voltage and second voltage supplied from a register are applied to adjacent first bit lines and second bit lines respectively, a stage in which the first bit lines and second bit lines are separated electrically from corresponding registers, a stage in which the first bit line is charged to third voltage being higher than the first voltage and lower than the second voltage, and a stage in which fourth voltage is applied to word lines after a current path to the first bit line and the second bit line are cut off.