| 摘要 |
The present invention relates to a furnace of a metal organic chemical vapor deposition (MOCVD) device. The present invention is to provide a furnace of an MOCVD device insulating high temperature in a furnace, when trimethylgallium is supplied, and performing a process reaction at a uniform temperature at the same. The furnace of the MOCVD device also enables a membrane of a wafer to be maintained in a uniform thickness. The furnace of the MOCVD device includes: a gas nozzle unit; a boat unit accommodating the wafer around the gas nozzle unit; a process gas jetting nozzle radially provided as extended from a first tube of the gas nozzle unit, and installed to pass through a second tube and a third tube to jet process gas onto the wafer arranged on the furnace on a lateral side of a fourth tube; and a vacuum guide which provides a pressure in a vacuum state to discharge the remaining process gas generated toward an upper part from a lower part of a process tube as jetted from the gas nozzle unit to discharge the remaining process gas, and installed along an inner circumferential surface of an inner tube of the process tube. The gas nozzle unit comprises: the first tube installed in the center of the process tube of the furnace of the MOCVD device, and supplying the process gas to form a membrane on the wafer; a second tube having cooling gas introduced from a lower part of the furnace around the first tube to flow into an upper opening; the third tube collecting the cooling gas, and flowing the cooling gas to be discharged to the outside of the furnace; and the fourth tube installed on an outer edge of the third tube, and blocking high-temperature heat from the furnace. |
