| 摘要 |
PROBLEM TO BE SOLVED: To increase an occupied area of a capacitor in a semiconductor device such as a DRAM.SOLUTION: A semiconductor device 100 comprises a memory cell region (active region 1A) which is composed of a plurality of transistor pillars 5 vertically arranged on a surface of a semiconductor substrate and a plurality of capacitors 56 connected to respective top faces of the plurality of transistor pillars, and which is arranged to make planar centers of the plurality of transistor pillars 5 form a planar closest packing arrangement. |
