SEMICONDUCTOR DEVICE AND EVALUATION METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To easily improve a decrease in yield due to a gate leakage fault caused by a pin hole and the like of a gate oxide film in a power transistor without side effects such as an area increase.SOLUTION: In a semiconductor device having a transistor composed of a plurality of unit transistors connected in parallel with each other: gate electrodes of respective unit transistors are connected to first wiring in common to be linked to a first gate input terminal; and source electrodes of respective unit transistors are connected to second wiring in common to be linked to a source input terminal; and drain electrodes of respective unit transistors are connected to third wiring in common to be linked to a drain input terminal; and a first fuse element is arranged between the gate electrode of each unit transistor and the first wiring.