| 摘要 |
Disclosed is a power semiconductor device using an injection effect. A power semiconductor device where an active region, a peripheral region, a termination region and the outer region of the termination are divided, has a first device structure which is one of a MOSFET structure or IGBT structure in a vertical direction in the active region, an additional ion region in the upper region of the outer region of the terminal and an additional metal terminal which is electrically connected to the additional ion region. The additional ion region may be determined to include conductive ions to form a second device structure which is the other of the MOSFET structure or IGBT structure in a horizontal relation to the active region. |
