| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of facilitating manufacture of a structure formed by integrating MOSFET and IGBT into one chip, using silicon carbide.SOLUTION: The silicon carbide semiconductor device includes: a first conductivity type of semiconductor layer (1); a second conductivity type of first semiconductor region (2); an impurity region (13); a first conductivity type of second semiconductor region (3); a gate insulator (4); a gate electrode 5; an interlayer insulator 6; a first electrode (7); a second electrode (14); a third electrode (9); and a connection body (15). A metal wire 15 electrically connects a collector electrode 14 with a drain electrode 9. |
