MASK BLANK, MASK BLANK HAVING NEGATIVE TYPE RESIST FILM, PHASE SHIFT MASK, AND MANUFACTURING METHOD OF PATTERN FORMING BODY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a mask blank having an excellent transfer property in photo lithography, as well as high irradiation resistance against ArF excimer laser exposure light and cleaning resistance.SOLUTION: A mask blank 100 is used for manufacturing a half tone type phase shift mask employing ArF excimer laser exposure light. The mask blank 100 includes a transparent substrate and a light translucent film 102 formed on the transparent substrate 100 and configured by laminating a layer 102a including SiON(in which x and y satisfy 0