PRODUCTION METHOD OF SILICON CARBIDE INGOT

摘要

PROBLEM TO BE SOLVED: To raise a crystal growth rate while suppressing contamination of a heterogeneous polytype in producing a silicon carbide ingot.SOLUTION: A production method of a silicon carbide ingot includes a step for preparing a raw material and a seed crystal, and a crystal growth step for sublimating the raw material and reprecipitating the sublimated raw material on the seed crystal to grow a single crystal. The temperature difference between the raw material and the growing seed crystal is 200°C or less. The crystal growth step includes a first step for growing the single crystal for 10 minutes or more and 10 hours or less under a pressure condition of 1.33 kPa or higher and 2.67 kPa or lower while keeping the temperature of the single crystal in a first temperature zone, and a second step for raising the temperature of the single crystal to a second temperature zone which is higher than the first temperature zone and further growing the single crystal while keeping the temperature of the single crystal in the second temperature zone.