| 摘要 |
An insulated gate semiconductor device with a control circuit can operate stable and at low power consumption. The insulated gate semiconductor device with a control circuit has a first insulated gate type semiconductor element and a control circuit controlling and the first insulated gate type semiconductor element on the same package, and at least three external terminals including an external gate terminal, an external first terminal and an external terminal provided for externally leading electrodes outside of the package. A first MOSFET having a source terminal electrically connected to the external first terminal, a first terminal of the first insulated gate semiconductor device, and a grounding terminal of the control unit. The external second terminal, a second terminal of the first insulated gate type semiconductor device and a second terminal of an enhancement type second insulated gate semiconductor element are connected electrically, the external gate terminal and a gate terminal of the enhancement type second insulated gate semiconductor element are connected electrically, a first voltage holding element are connected between the external gate terminal and a gate terminal of the first insulated gate type semiconductor element, a drain of the first MOSFET and a first terminal of the enhancement type second insulated gate semiconductor element are electrically connected between the first voltage holding element and the gate terminal of the first insulated gate semiconductor element and an output terminal of the control circuit and a gate of the first MOSFET are connected electrically.
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