| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of suppressing end surface breakage caused by catastrophic optical damage (COD) of a light emission end surface, and of having a high output characteristics.SOLUTION: Above an n-type substrate whose principal surface has an off angle from a (0001) plane in a <1-100> direction, an n-type clad layer NCLD, current block layers BL, an active layer, and a p-type clad layer are provided. For example, the current block layers BL are arranged on both sides of a current constriction region (a region 1A). In addition, the current block layers BL are arranged so as to be retreated from a cleavage plane (a line CL). In this case, in the active layer that has a quantum well structure crystal-grown above the n-type clad layer NCLD and the current block layer, a layer thickness in a window region WA from the cleavage plane (the line CL) to an end part of the current block layer BL becomes smaller than a layer thickness of the current constriction region (between the current block layers BL, the region 1A). As a result, a bandgap of the active layer in the window region WA becomes large, and end surface breakage caused by COD can be suppressed. |
