| 摘要 |
PURPOSE: A fabrication method of a dielectric film is provided to prevent degradation of the dielectric film and to achieve thermally stable dielectric film by annealing the dielectric film using a laser. CONSTITUTION: A fluorinated amorphous carbon(a-C:F) is deposited on a desired layer. A laser beam is irradiated to the deposited fluorinated amorphous carbon(a-C:F), thereby forming a thermally stable dielectric film without increasing a dielectric constant of the dielectric film. At this time, the irradiated laser beam is to be excited only hydrogen in the fluorinated amorphous carbon(a-C:F) without exciting fluorine(F). Preferably, the energy of the laser beam is 50-100 mJ/sec and the irradiated time of the laser beam is about 1-10 seconds.
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