| 摘要 |
The present invention relates to a base film of a tape for a process of semiconductor production, which comprises: A) an ionomer resin which is made by bridging a specific binary copolymer with a metal ion; and, B) an ionomer resin made by bridging a specific ternary copolymer with a metal ion. The mass ratio of the substance A) and the substance B) is 50 to 50 through 5 to 95. The base film of a tape for a process of semiconductor production of the present invention is made of a middle layer and external layers on both sides of the middle layer. The middle layer comprises: A) an ionomer resin made by bridging a specific binary copolymer with a metal ion; and, B) an ionomer resin made by bridging a specific ternary copolymer with a metal ion. The mass ratio of the substance A) and the substance B) is 50 to 50 through 5 to 95. |
