发明名称 |
MESURE DE RADIATIONS DE HAUTE FLUENCE PAR UN ELEMENT CAPACITIF DE TYPE MOS |
摘要 |
<p>A method for measuring a dose related to the non-ionizing effects of a radiation of particles comprises the irradiation of a capacitive element provided with an electrode made from a semiconductor material, the measurement of the capacitance of the capacitive element in an accumulation regime and the determination of the dose related to the non-ionizing effects from the measurement of capacitance of the capacitive element in the accumulation regime.</p> |
申请公布号 |
FR2971053(B1) |
申请公布日期 |
2015.12.11 |
申请号 |
FR20110000303 |
申请日期 |
2011.02.01 |
申请人 |
UNIVERSITE MONTPELLIER 2 SCIENCES ET TECHNIQUES |
发明人 |
ARINERO RICHARD;MEKKI JULIEN;TOUBOUL ANTOINE;SAIGNE FREDERIC;VAILLE JEAN ROCH |
分类号 |
G01T1/02 |
主分类号 |
G01T1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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