| 摘要 |
A semiconductor device includes a substrate where a cell region, a contact region located around the cell region, a page buffer region, and a scribe lane region are defined; a non-stepped cell structure which is located in the cell region and includes alternately stacked first conductive layers and first insulating layers; a stepped contact structure which is located in the contact region and includes alternately stacked second conductive layers and second insulating layers; a non-stepped first dummy structure which is located in a page buffer region and includes alternately stacked first sacrificial layers and third insulating layers; and a second dummy structure which is located in the scribe lane region and includes alternately stacked second sacrificial layers and fourth insulating layers. |
