| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; performing a first dry etching process to form a recess in the substrate adjacent to the gate structure; and performing a second dry etching process to expand the recess. |
| 申请公布号 |
US2015357436(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201414324252 |
申请日期 |
2014.07.07 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Shen Wen-Jiun;Liu Chia-Jong;Chen Yi-Wei;Fu Ssu-I;Chang Chung-Fu;Hung Yu-Hsiang;Wu Yen-Liang;Lu Man-Ling |
| 分类号 |
H01L29/66;H01L21/3065;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate; forming a gate structure on the substrate; performing a first dry etching process to form a recess in the substrate adjacent to the gate structure; and performing a second dry etching process to expand the recess. |
| 地址 |
Hsin-Chu City TW |
