SEMICONDUCTOR DEVICE

摘要

According to an embodiment, a semiconductor device includes two electrodes extending in a first direction, a semiconductor layer provided between the two electrodes, an insulating film disposed between the two electrodes. The two electrodes are arranged in a second direction intersecting the first direction. The semiconductor layer extends in a third direction orthogonal to the first direction and the second direction. The insulating film covers a side surface of the semiconductor layer opposite to one of the two electrodes. The semiconductor layer has a shape in a cross section perpendicular to the third direction such that a width in the first direction at a center of the cross section is narrower than a width, in the first direction, of the side surface.

主权项

1. A semiconductor device, comprising:
two electrodes extending in a first direction, the two electrodes being arranged in a second direction intersecting the first direction; at least one semiconductor layer provided between the two electrodes, the semiconductor layer extending in a third direction orthogonal to the first direction and the second direction; and an insulating film provided between the two electrodes, and covering side surfaces of the semiconductor layer, the semiconductor layer having a shape in a cross section perpendicular to the third direction such that a width in the first direction at a center between the two electrodes is narrower than a width, in the first direction, of portions adjacent to the two electrodes.