发明名称 MULTI-LAYER MEMORY ARRAY AND MANUFACTURING METHOD OF THE SAME
摘要 A memory array includes a plurality of ridge-shaped multi-layer stacks extending along a first direction, and a hard mask layer formed on top of the plurality of ridge-shaped multi-layer stacks. The hard mask layer includes a plurality of stripes vertically aligned with the plurality of ridge-shaped multi-layer stacks, respectively, a plurality of bridges connecting adjacent ones of the stripes along a second direction orthogonal to the first direction, and a plurality of hard mask through holes between the plurality of bridges and the plurality of stripes.
申请公布号 US2015357341(A1) 申请公布日期 2015.12.10
申请号 US201414296173 申请日期 2014.06.04
申请人 Macronix International Co., Ltd. 发明人 Yeh Teng-Hao;Hu Chih-Wei;Shih Yen-Hao
分类号 H01L27/115;H01L29/40 主分类号 H01L27/115
代理机构 代理人
主权项 1. A method for manufacturing a memory array, comprising: forming a multi-layer stack on a surface of a substrate; forming a plurality of first through holes through the multi-layer stack along a vertical direction of the multi-layer stack from a top surface of the multi-layer stack to the surface of the substrate, the first through holes being arranged in equally spaced rows along a first direction along the surface of the substrate, and equally spaced columns along a second direction orthogonal to the first direction; forming a plurality of sacrificial pillars to fill in the first through holes; forming a hard mask layer over the multi-layer stack with the sacrificial pillars, the hard mask layer including a plurality of hard mask through holes exposing regions of the multi-layer stack between neighboring sacrificial pillars in each column of sacrificial pillars; forming a plurality of second through holes through the multi-layer stack along the vertical direction of the multi-layer stack from the top surface of the multi-layer stack to the surface of the substrate, the second through holes being vertically aligned with the hard mask through holes; and removing the sacrificial pillars filling in the first through holes, wherein the second through holes are connected with the first through holes to form a plurality of trenches extending along the second direction, and the trenches divide the multi-layer stack into a plurality of ridge-shaped stacks extending along the second direction.
地址 Hsinchu TW