发明名称 |
MULTI-LAYER MEMORY ARRAY AND MANUFACTURING METHOD OF THE SAME |
摘要 |
A memory array includes a plurality of ridge-shaped multi-layer stacks extending along a first direction, and a hard mask layer formed on top of the plurality of ridge-shaped multi-layer stacks. The hard mask layer includes a plurality of stripes vertically aligned with the plurality of ridge-shaped multi-layer stacks, respectively, a plurality of bridges connecting adjacent ones of the stripes along a second direction orthogonal to the first direction, and a plurality of hard mask through holes between the plurality of bridges and the plurality of stripes. |
申请公布号 |
US2015357341(A1) |
申请公布日期 |
2015.12.10 |
申请号 |
US201414296173 |
申请日期 |
2014.06.04 |
申请人 |
Macronix International Co., Ltd. |
发明人 |
Yeh Teng-Hao;Hu Chih-Wei;Shih Yen-Hao |
分类号 |
H01L27/115;H01L29/40 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a memory array, comprising:
forming a multi-layer stack on a surface of a substrate; forming a plurality of first through holes through the multi-layer stack along a vertical direction of the multi-layer stack from a top surface of the multi-layer stack to the surface of the substrate, the first through holes being arranged in equally spaced rows along a first direction along the surface of the substrate, and equally spaced columns along a second direction orthogonal to the first direction; forming a plurality of sacrificial pillars to fill in the first through holes; forming a hard mask layer over the multi-layer stack with the sacrificial pillars, the hard mask layer including a plurality of hard mask through holes exposing regions of the multi-layer stack between neighboring sacrificial pillars in each column of sacrificial pillars; forming a plurality of second through holes through the multi-layer stack along the vertical direction of the multi-layer stack from the top surface of the multi-layer stack to the surface of the substrate, the second through holes being vertically aligned with the hard mask through holes; and removing the sacrificial pillars filling in the first through holes, wherein the second through holes are connected with the first through holes to form a plurality of trenches extending along the second direction, and the trenches divide the multi-layer stack into a plurality of ridge-shaped stacks extending along the second direction. |
地址 |
Hsinchu TW |