发明名称 |
FINFET AND FIN-PASSIVE DEVICES |
摘要 |
A method of forming a semiconductor structure within a semiconductor substrate is provided. The method may include forming, on the substrate, a first group of fins associated with a first device; a second group of fins associated with a second device; and a third group of fins located between the first group of fins and the second group of fins, whereby the third group of fins are associated with a third device. A shallow trench isolation (STI) region is formed between the first and the second group of fins by recessing the third group of fins into an opening within the substrate, such that the recessed third group of fins includes a fin top surface that is located below a top surface of the substrate. The top surface of the substrate is substantially coplanar with a fin bottom surface corresponding to the first and second group of fins. |
申请公布号 |
US2015357331(A1) |
申请公布日期 |
2015.12.10 |
申请号 |
US201514830182 |
申请日期 |
2015.08.19 |
申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Divakaruni Ramachandra;Khakifirooz Ali;Standaert Theodorus E. |
分类号 |
H01L27/092;H01L49/02;H01L29/06 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Armonk NY US |