| 摘要 |
An ultra-low dielectric constant insulating film and a method for manufacturing same are disclosed. The method comprises: step 1, depositing a thin film by a technology of plasma enhance chemical vapor deposition, MTES and LIMO used as reaction source and helium used as carrier gas being led into a chemical vapor deposition reaction cavity, wherein, the insulating film formed by deposition has a thickness of 50-100 nm, and the flow ratio of the MTES and the LIMO is equal to 1:1 - 1:2.5; step 2, conducting in-situ remediation on the surface of the insulating layer by using Ar plasma to form a compact modified layer; step 3, repeating step 1 and step 2 to obtain the insulating film of target thickness; step 4, annealing the insulation film at high temperature to form ultra-low dielectric constant insulating film. Alternative plasma used for enhancing the chemical vapor deposition of the insulating film and post-plasma processing are creatively used in the invention with simply process and good deposition rate, the formed film has good moisture resistance and is compatible with integrated technique, the film forming quality is good, and the needs of advanced integrated circuit for electrical property, mechanical property and insulation property of low dielectric constant material are fully satisfied. |
