| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of measuring an impurity concentration in a semiconductor with high accuracy.SOLUTION: A method of producing a calibration curve includes the following steps of: ion-implanting impurities to a plurality of first samples formed of the same semiconductor at amounts different from each other; measuring a light emission intensity derived from the impurities by a photoluminescence method for each first sample to which the impurities are ion-implanted, and calculating a relation between an amount of the implanted impurities and the light emission intensity; measuring, for a second sample formed of the same semiconductor as the first sample, a light emission intensity derived from the impurities included in the second sample by the photoluminescence method, under the same conditions as the light emission intensity measurement by the photoluminescence method for each first sample; and, on the basis of the relation, the light emission intensity obtained for the second sample, and a concentration of the impurities included in the second sample that is measured by a method other than the photoluminescence method, producing a calibration curve representing a relation between the concentration of the impurities and the light emission intensity derived from the impurities. |
