SEMICONDUCTOR STRUCTURE, RESISTIVE RANDOM ACCESS MEMORY UNIT STRUCTURE, AND MANUFACTURING METHOD OF THE SEMICONDUCTOR STRUCTURE

摘要

A semiconductor structure, a resistive random access memory unit structure, and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes an insulating structure, a stop layer, a metal oxide layer, a resistance structure, and an electrode material layer. The insulating structure has a via, and the stop layer is formed in the via. The metal oxide layer is formed on the stop layer. The resistance structure is formed at a bottom of an outer wall of the metal oxide layer. The electrode material layer is formed on the metal oxide layer.

主权项

1. A semiconductor structure, comprising:
an insulating structure having a via; a stop layer formed in the via; a metal oxide layer formed on the stop layer; a resistance structure formed at a bottom of an outer wall of the metal oxide layer, wherein a top surface of the resistance structure is below a top surface of the metal oxide layer; and an electrode material layer formed on the metal oxide layer.