CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD

摘要

A CIGS film production method capable of suppressing oxidation of a front surface of a CIGS film, and a CIGS solar cell production method using the CIGS film production method includes the steps of: forming a first region having a Ga/(In+Ga) ratio progressively reduced as the thickness of the first region increases to a predetermined first thickness position from a back surface of the CIGS film; forming a second region having a Ga/(In+Ga) ratio progressively increased as the thickness of the second region increases to a predetermined second thickness position from the first region; and forming a third region on the second region by vapor-depositing Se and In, the third region having a Ga/(In+Ga) ratio progressively reduced toward a front surface of the CIGS film.

主权项

1. A production method for a CIGS film to be used as a light absorbing layer for a CIGS solar cell, the method comprising the steps of:
forming a first region having a Ga/(In+Ga) ratio progressively reduced from a back surface of the CIGS film toward a front surface of the CIGS film; forming a second region on the first region, the second region having a Ga/(In+Ga) ratio progressively increased toward a front surface of the CIGS film; and forming a third region on the second region by vapor-depositing selenium (Se) and indium (In), the third region having a Ga/(In+Ga) ratio progressively reduced toward the front surface of the CIGS film; wherein the Ga/(In+Ga) ratios are each defined as a ratio of a gallium (Ga) atomic number concentration to a sum of an indium (In) atomic number concentration and the gallium (Ga) atomic number concentration.