BURIED SOURCE-DRAIN CONTACT FOR INTEGRATED CIRCUIT TRANSISTOR DEVICES AND METHOD OF MAKING SAME

摘要

An integrated circuit transistor is formed on a substrate. A trench in the substrate is at least partially filed with a metal material to form a source (or drain) contact buried in the substrate. The substrate further includes a source (or drain) region in the substrate which is in electrical connection with the source (or drain) contact. The substrate further includes a channel region adjacent to the source (or drain) region. A gate dielectric is provided on top of the channel region and a gate electrode is provided on top of the gate dielectric. The substrate may be of the silicon on insulator (SOI) or bulk type. The buried source (or drain) contact makes electrical connection to a side of the source (or drain) region using a junction provided at a same level of the substrate as the source (or drain) and channel regions.

主权项

1. An integrated circuit transistor, comprising:
a substrate including a trench; a metal material at least partially filling the trench to form a source contact buried in the substrate; a source region in the substrate in electrical connection with the source contact; a channel region in the substrate adjacent the source region; a gate dielectric on top of the channel region; and a gate electrode on top of the gate dielectric.