发明名称 |
HYBRID BIPOLAR JUNCTION TRANSISTOR |
摘要 |
Bipolar junction transistors including inorganic channels and organic emitter junctions are used in some applications for forming high resolution active matrix displays. Arrays of such bipolar junction transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes. |
申请公布号 |
US2015357386(A1) |
申请公布日期 |
2015.12.10 |
申请号 |
US201514827266 |
申请日期 |
2015.08.14 |
申请人 |
International Business Machines Corporation |
发明人 |
Afzali-Ardakani Ali;Hekmatshoartabari Bahman;Ning Tak H.;Shahrjerdi Davood |
分类号 |
H01L27/32;H01L29/73;H01L29/10;H01L27/12;H01L29/08 |
主分类号 |
H01L27/32 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising
obtaining a bipolar junction transistor including a doped crystalline inorganic semiconductor layer and emitter, base and collector contact structures operatively associated with the crystalline inorganic semiconductor layer, the emitter contact structure configured for transporting charge carriers having a first charge type into the inorganic semiconductor layer and suppressing diffusion of charge carriers having a second charge type opposite from the first charge type from the inorganic semiconductor layer, the emitter contact structure including a first organic semiconductor carrier transport layer for transporting the charge carriers having the first type; causing diffusion of charge carriers having the first charge type into the inorganic semiconductor layer from the emitter contact structure; within the emitter contact structure, suppressing diffusion of charge carriers having the second charge type opposite from the inorganic semiconductor layer, and causing the bipolar junction transistor to provide electrical current to an electronic device. |
地址 |
Armonk NY US |