Current Induced Spin-Momentum Transfer Stack With Dual Insulating Layers

摘要

A high speed, low power method to control and switch the magnetization direction of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a pinned magnetic layer, a reference magnetic layer with a fixed magnetization direction and a free magnetic layer with a changeable magnetization direction. The magnetic layers are separated by insulating non-magnetic layers. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, can be measured to read out the information stored in the device.

主权项

1. A magnetic device comprising:
a pinned magnetic layer with a first magnetization vector with a first magnetization direction that is fixed; a free magnetic layer with a second magnetization vector with a changeable second magnetization direction; a first non-magnetic insulating layer that spatially separates the free magnetic layer and the pinned magnetic layer, wherein the first non-magnetic insulating layer is sufficiently thin such that electrons traverse the first non-magnetic layer by quantum mechanical tunneling; a read-out magnetic layer with a third magnetization vector with a third magnetization direction that is fixed, wherein the first magnetization vector is orthogonal to the second magnetization vector and the third magnetization vector; and a second non-magnetic insulating layer that spatially separates the free magnetic layer and the read-out magnetic layer, wherein the second non-magnetic insulating layer is sufficiently thin such that electrons traverse the second non-magnetic layer by quantum mechanical tunneling.