| 摘要 |
The present invention relates to Al In Ga N-based superluminescent diode, comprising a semiconductor substrate (1), a lower cladding layer (2) with n-type electric conductivity, a lower light-guiding layer (3) with n-type electric conductivity, a light emitting layer (4), an electron blocking layer (5) with p-type electric conductivity, an upper light-guiding layer (6), an upper cladding layer (7) with p- type electric conductivity, a subcontact layer (8) doped with acceptors in concentration higher than 1020 cm-3, and an antireflective layer deposited on the output facet (12) of the waveguide, wherein the antireflective layer contains dielectric nanoparticles (14) whose largest geometrical measurement is smaller than the wavelength of the light emitted by the diode. |
