VERTICAL NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a vertical nitride semiconductor device including a conductive substrate; a semiconductor layer bonded to the conductive substrate via a second electrode; a metal layer formed on the conductive substrate; a first electrode formed on the semiconductor layer; and a bonding layer formed between the conductive substrate and the second electrode. The conductive substrate has a flange part, which extends from a side surface of the conductive substrate, on a side of the other front surface thereof. The flange part is formed in a manner in which the conductive substrate and the semiconductor layer are bonded together and then a remaining part of the conductive substrate is divided, the remaining part being formed by cutting off the semiconductor layer and part of the conductive substrate in a thickness direction so as to expose a side surface of the semiconductor layer and the side surface of the conductive substrate.

主权项

1. A vertical nitride semiconductor device, comprising:
a conductive substrate having a first surface, a second surface opposite to the first surface and side surfaces; a semiconductor layer bonded to a side of the first surface of the conductive substrate via a second electrode and made of nitride; a metal layer formed on the second surface of the conductive substrate; a first electrode formed on a front surface facing a bonding front surface of the semiconductor layer; and a bonding layer formed between the conductive substrate and the second electrode and made of an electrode material or a conductive material, wherein the conductive substrate has a flange part, which extends from the side surfaces of the conductive substrate, on a side of the second surface thereof, wherein each of at least two of the side surfaces of the conductive substrate on the side of the first surface is flush with a corresponding side surface of the semiconductor layer and a corresponding side surface of the bonding layer and each of at least two side surfaces of the flange part is flush with a corresponding side surface of the metal layer.