| 发明名称 |
BIPOLAR TRANSISTOR WITH EXTRINSIC BASE REGION AND METHODS OF FABRICATION |
| 摘要 |
The present disclosure relates to integrated circuit (IC) structures and methods of forming the same. An IC structure according to the present disclosure can include: a doped substrate region adjacent to an insulating region; a crystalline base structure including: an intrinsic base region located on and contacting the doped substrate region, the intrinsic base region having a first thickness; an extrinsic base region adjacent to the insulating region, wherein the extrinsic base region has a second thickness greater than the first thickness; a semiconductor layer located on the intrinsic base region of the crystalline base structure; and a doped semiconductor layer located on the semiconductor layer. |
| 申请公布号 |
US2015357447(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201414300944 |
申请日期 |
2014.06.10 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Adkisson James W.;Harame David L.;Kerbaugh Michael L.;Liu Qizhi;Pekarik John J. |
| 分类号 |
H01L29/732;H01L29/10;H01L29/66 |
主分类号 |
H01L29/732 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit (IC) structure comprising:
a doped substrate region adjacent to an insulating region; a crystalline base structure including:
an intrinsic base region located on and contacting the doped substrate region, the intrinsic base region having a first thickness;an extrinsic base region adjacent to the insulating region, wherein the extrinsic base region has a second thickness greater than the first thickness; a semiconductor layer located on the intrinsic base region of the crystalline base structure; and a doped semiconductor layer located on the semiconductor layer. |
| 地址 |
Armonk NY US |
