SEMICONDUCTOR DEVICE

摘要

A semiconductor device in which the concentration of an electric field is suppressed in a region overriding a drain region and a source region. A drain region is formed in a first region, a source region is formed in a second region. A field oxide film surrounds the first region in a plan view. A metal interconnect situated over a field oxide film. The metal interconnect formed of a metal having an electric resistivity at 25° C. of 40 μΩ·cm or more and 200 μΩ·cm or less. Further, the metal interconnect is repeatedly provided spirally in a direction along the edges of the first region. Further, the metal interconnect is electrically connected at the innermost circumference with the drain region, and is connected at the outermost circumference to the source region or a ground potential.

主权项

1. A semiconductor device including
a substrate, a transistor formed in the substrate, a first region formed in the substrate and including a drain region of the transistor, a field insulation film formed in the substrate and surrounding the first region in a plan view, a second region formed in the substrate, situated outside the first region by way of the field insulation film in the plan view and including a source region of the transistor, and a metal interconnect situated over the field insulation film, wherein the metal interconnect is formed of a metal having an electric resistivity at 25° C. of 40 μΩ·cm or more and 200 μΩ·cm or less, and repeatedly provided while being turned back or spirally in the direction along the edges of the first region, electrically connected at the innermost circumference with the drain region, and electrically connected at the outermost circumference with the source region or a ground potential.