| 发明名称 |
SEMICONDUCTOR DEVICES COMPRISING INTERCONNECT STRUCTURES AND METHODS OF FABRICATION |
| 摘要 |
Semiconductor devices comprise at least one integrated circuit layer, at least one conductive trace and an insulative material adjacent at least a portion of the at least one conductive trace. At least one interconnect structure extends through a portion of the at least one conductive trace and a portion of the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace which differs from a transverse cross-sectional dimension through the insulative material. |
| 申请公布号 |
US2015357284(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201514827763 |
申请日期 |
2015.08.17 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Sandhu Gurtej S.;Sinha Nishant;Smythe John A. |
| 分类号 |
H01L23/528;H01L23/532;H01L21/768;H01L23/522 |
主分类号 |
H01L23/528 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
at least one integrated circuit in communication with at least one conductive trace disposed on an insulative material; at least one interconnect structure extending through the at least one conductive trace and through the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace that differs from a transverse cross-sectional dimension through the insulative material; and a silicide material between the at east one conductive trace and the at least one interconnect structure. |
| 地址 |
Boise ID US |
