发明名称 |
INTEGRATED INTERPOSER SOLUTIONS FOR 2D AND 3D IC PACKAGING |
摘要 |
An integrated circuit (IC) package includes a first substrate having a backside surface and a top surface with a cavity disposed therein. The cavity has a floor defining a front side surface. A plurality of first electroconductive contacts are disposed on the front side surface, and a plurality of second electroconductive contacts are disposed on the back side surface. A plurality of first electroconductive elements penetrate through the first substrate and couple selected ones of the first and second electroconductive contacts to each other. A first die containing an IC is electroconductively coupled to corresponding ones of the first electroconductive contacts. A second substrate has a bottom surface that is sealingly attached to the top surface of the first substrate, and a dielectric material is disposed in the cavity so as to encapsulate the first die. |
申请公布号 |
US2015357272(A1) |
申请公布日期 |
2015.12.10 |
申请号 |
US201414586580 |
申请日期 |
2014.12.30 |
申请人 |
Invensas Corporation |
发明人 |
Shen Hong;Woychik Charles G.;Sitaram Arkalgud R.;Gao Guilian |
分类号 |
H01L23/498;H01L21/56;H01L21/48;H01L25/16;H01L23/31 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit (IC) package, comprising:
a first substrate having a backside surface and a top surface with a cavity disposed therein, the cavity having a floor defining a front side surface; a plurality of first electroconductive contacts disposed on the front side surface; a plurality of second electroconductive contacts disposed on the back side surface; a plurality of first electroconductive elements penetrating through the first substrate and coupling selected ones of the first and second electroconductive contacts to each other; a first die containing an IC electroconductively coupled to corresponding ones of the first electroconductive contacts; a second substrate having a bottom surface sealingly attached to the top surface of the first substrate; and a dielectric material disposed in the cavity and encapsulating the first die. |
地址 |
San Jose CA US |