发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND TRANSFER SHEET AND MANUFACTURING METHOD THEREOF |
摘要 |
In a conventional semiconductor device, a pattern serving as a heat dissipating material is formed by applying a phase transition material. Provided is a semiconductor device that can reduce collapse of a pattern shape even if a shock is applied to the pattern formed with the phase transition material that is liquefied when the environmental temperature is not sufficiently controlled. The semiconductor device includes semiconductor elements mounted inside a semiconductor module (10); a heat radiating surface (13), formed in the semiconductor module (10), dissipating heat generated in the semiconductor elements to a heat radiator; a pattern (14) formed on the heat radiating surface and made from a phase transition material; and a film (15) serving as a first film that covers the pattern (14). |
申请公布号 |
US2015357262(A1) |
申请公布日期 |
2015.12.10 |
申请号 |
US201514696199 |
申请日期 |
2015.04.24 |
申请人 |
Mitsubishi Electric Corporation |
发明人 |
YONEYAMA Rei;HARADA Kozo;OSHIMA Isao;OTSUBO Yoshitaka;KAWAHARA Rena |
分类号 |
H01L23/427;H01L23/367;H01L23/544 |
主分类号 |
H01L23/427 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a semiconductor element mounted inside a semiconductor module; a heat radiating surface, formed in the semiconductor module, dissipating heat generated in the semiconductor element to a heat radiator; a pattern made from a phase transition material and formed on the heat radiating surface; and a first film covering the pattern. |
地址 |
Tokyo JP |