发明名称 APPARATUS AND METHOD FOR PROCESSING SUBSTRATE
摘要 The present invention relates to a substrate processing apparatus which processes a substrate. The substrate processing apparatus includes: a chamber forming a space inside; a substrate support installed in the chamber and supporting the substrate inside the chamber; a process gas spraying unit disposed to face the substrate support on an upper side of the chamber and spraying process gas to the substrate; and a cleaning gas spraying unit connected to a side of the chamber and spraying cleaning gas into the chamber. The substrate processing apparatus and a cleaning method thereof can effectively remove a deposit by spraying the cleaning gas toward a region of which a deposit concentration level is high.
申请公布号 KR20150138469(A) 申请公布日期 2015.12.10
申请号 KR20140064957 申请日期 2014.05.29
申请人 CHARM ENGINEERING CO., LTD. 发明人 MIN, SUK KI;HAN, YOUNG KI;SEO, YOUNG SOO;LEE, JUN HYEOK
分类号 H01L21/302;H01L21/02 主分类号 H01L21/302
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