NONVOLATILE MEMORY DEVICE

摘要

The present invention relates to a nonvolatile memory device and a manufacturing method thereof. The structure of the nonvolatile memory device includes gates which are vertically stacked on a substrate, a vertical channel which is filled in a channel hole vertically penetrating the gates, and a memory layer which is provided on the inner sidewall of the channel hole and is vertically extended. The vertical channel includes a lower channel which is filled in the lower part of the channel hole and is electrically connected to the substrate, and an upper channel which is filled in the upper part of the channel hole and is bonded to the lower channel. The lower channel includes vertically stacked semiconductor layers. The oxidation speeds of the semiconductor layers are different.