发明名称 |
MANUFACTURING METHOD OF POWER STORAGE DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To enhance performance such as higher cycle characteristics in a power storage device.SOLUTION: A power storage device comprises a current collector and a crystalline semiconductor layer having whiskers formed on and in close contact with the current collector. Enhancing a closer contact suppresses detachment of the crystalline semiconductor layer, achieves a cycle characteristic in which the specific capacity of a tenth cycle to a first cycle is 90% or more, and achieves a cycle characteristic in which the specific capacity of a hundredth cycle to the first cycle is 70% or more. |
申请公布号 |
JP2015222725(A) |
申请公布日期 |
2015.12.10 |
申请号 |
JP20150140210 |
申请日期 |
2015.07.14 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
KURIKI KAZUKI;KONISHI MICHIKO;TADOKORO ASAMI;YOSHIDA YASUNORI;OGINO KIYOFUMI;TAKEUCHI TOSHIHIKO |
分类号 |
H01M4/1395;H01G11/06;H01G11/24;H01G11/30;H01G11/70;H01G11/86;H01M4/134;H01M4/38;H01M4/64;H01M4/66;H01M10/052;H01M12/08 |
主分类号 |
H01M4/1395 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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