发明名称 MANUFACTURING METHOD OF POWER STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To enhance performance such as higher cycle characteristics in a power storage device.SOLUTION: A power storage device comprises a current collector and a crystalline semiconductor layer having whiskers formed on and in close contact with the current collector. Enhancing a closer contact suppresses detachment of the crystalline semiconductor layer, achieves a cycle characteristic in which the specific capacity of a tenth cycle to a first cycle is 90% or more, and achieves a cycle characteristic in which the specific capacity of a hundredth cycle to the first cycle is 70% or more.
申请公布号 JP2015222725(A) 申请公布日期 2015.12.10
申请号 JP20150140210 申请日期 2015.07.14
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KURIKI KAZUKI;KONISHI MICHIKO;TADOKORO ASAMI;YOSHIDA YASUNORI;OGINO KIYOFUMI;TAKEUCHI TOSHIHIKO
分类号 H01M4/1395;H01G11/06;H01G11/24;H01G11/30;H01G11/70;H01G11/86;H01M4/134;H01M4/38;H01M4/64;H01M4/66;H01M10/052;H01M12/08 主分类号 H01M4/1395
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