| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor structure having a charge hole supply layer for supplying an additive charge hole to improve light-emitting efficiency, and a semiconductor light-emitting device.SOLUTION: A nitride semiconductor structure includes an n-type semiconductor layer 2 and a p-type semiconductor layer 3. A light-emitting layer 4 is formed between the n-type semiconductor layer 2 and the p-type semiconductor layer 3. A charge hole supply layer 5 is formed between the light-emitting layer 4 and the p-type semiconductor layer 3. The charge hole supply layer 5 is InGaN where x is in the range of 0<x<1. The charge hole supply layer 5 is doped with a group IV element having concentration of 10to 10cm. A semiconductor light-emitting device comprises a substrate 1, an n-type semiconductor layer 2, a light-emitting layer 4, a charge hole supply layer 5, a p-type semiconductor layer 3, an n-type electrode 21, and a p-type electrode 31. |
