发明名称 |
MULLITE SINTERED COMPACT, METHOD FOR PRODUCING SAME, AND COMPOSITE SUBSTRATE |
摘要 |
This mullite sintered compact has an impurity element content not exceeding 1mass%, wherein the average particle diameter of the mullite sintered particles does not exceed 8μm, and the average maximum length of the pores which are present on the polished surface does not exceed 0.4μm. The center average roughness (Ra) of the surface is preferably 3nm or less. The maximum height (Rp) of the surface is preferably 30 nm or less. The number of pores present on the surface should preferably not exceed 10 per unit of area measuring 4μm x 4μm. |
申请公布号 |
WO2015186560(A1) |
申请公布日期 |
2015.12.10 |
申请号 |
WO2015JP65006 |
申请日期 |
2015.05.26 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
ISODA, YOSHINORI;SATO, YOSUKE;KATSUDA, YUJI |
分类号 |
C04B35/18;C04B37/00;H05K1/03 |
主分类号 |
C04B35/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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