| 摘要 |
Disclosed is a thin film material residual stress testing structure. The testing structure consists of two groups of structures. The first group of structures comprises an electrostatic driven polysilicon cantilever beam (101), an asymmetrical cross beam (102) made of thin film material to be tested and having an alignment structure, and a double-end fixed support beam (103) made of the thin film material to be tested. The second group of structures is the structure of the first group of structures remaining with the fixed support beam (103) removed. The residual stress testing method comprises: separating the loading drive part of force from a residual stress testing structure made of the thin film material to be tested; designing the bending deflection of a control testing structure according to geometrical parameters; extracting the force applied on the residual stress testing structure according to the theory that the same part of the two groups of testing structures have the same force being applied; and utilizing force and deflection to calculate the residual stress of the thin film material to be tested. Also disclosed is a thin film material residual stress testing method. The testing structure, the testing method and the parameter extraction based calculation method are quite simple, have wide adaptability, and can be used to test the residual stress of electrically conductive or insulating thin film material. |
