发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce noise of a semiconductor device having a power module.SOLUTION: A semiconductor device 1 having a structure where a power module 2 is provided on a cooler 4 via an insulation layer 3 comprises an inductor 5 provided between the power module 2 and the cooler 4 in parallel with the insulation layer 3. Capacitance of the insulation layer 3 and a frequency of the LC resonance circuit are controlled in a manner such that a frequency of an LC resonance circuit formed by the insulation layer 3 and the inductor 5 becomes a frequency to reduce noise generated in the power module 2.
申请公布号 JP2015223010(A) 申请公布日期 2015.12.10
申请号 JP20140105742 申请日期 2014.05.22
申请人 MEIDENSHA CORP 发明人 NISHIGUCHI TETSUYA;YAMADA SHINICHI;SHIMOMURA JUNICHI;IKEDA ISAMU
分类号 H02M7/48;H01L25/07;H01L25/18 主分类号 H02M7/48
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