PHOTOELECTRIC CONVERSION ELEMENT

摘要

A photoelectric conversion element includes a first lower electrode in contact with a first-conductivity-type layer and a first upper electrode disposed on the first lower electrode. A part of the first-conductivity-type layer and a part of a second-conductivity-type layer are located above a region where an intrinsic layer contacts an insulating layer.

主权项

1. A photoelectric conversion element comprising:
a semiconductor; an intrinsic layer disposed on the semiconductor and containing hydrogenated amorphous silicon; a first-conductivity-type layer of a first conductivity type that covers a part of the intrinsic layer; a second-conductivity-type layer of a second conductivity type that covers a part of the intrinsic layer; a first insulating layer that covers a part of the intrinsic layer; a first electrode disposed on the first-conductivity-type layer; and a second electrode disposed on the second-conductivity-type layer, wherein a part of the first-conductivity-type layer and a part of the second-conductivity-type layer are located above a region where the first intrinsic layer contacts the insulating layer.