OPTOELECTRONIC INTEGRATED CIRCUIT

摘要

A semiconductor device employs an epitaxial layer arrangement including a first ohmic contact layer (14) and first modulation doped quantum well structure (20) disposed above the first ohmic contact layer. The first ohmic contact layer has a first doping type, and the first modulation doped quantum well structure has a modulation doped layer of a second doping type. At least one isolation ion implant region (218) is provided that extends through the first ohmic contact layer. The at least one isolation ion implant region (218) can include oxygen ions. The at least one isolation ion implant region can define a region that is substantially free of charge carriers in order to reduce a characteristic capacitance of the device. A variety of high performance transistor devices (e.g., HFET and BICFETs) and optoelectronic devices can employ this device structure. Other aspects of wavelength-tunable microresonantors and related semiconductor fabrication methodologies are also described and claimed. A laser diode may comprise an annular ring resonator comprising two concentric ring mesa (212) with a narrow gap (232) between. The cathode (224) is in the centre of the device with and a ring anode (222) around. A p-type current block region (216) is generated by ion implantation. The resonator supports whispering gallery modes.