| 发明名称 |
GERMANIUM METAL-CONTACT-FREE NEAR-IR PHOTODETECTOR |
| 摘要 |
A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at -4 V reverse bias. 3-dB bandwidth is 30 GHz. |
| 申请公布号 |
CA2941586(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
CA20152941586 |
申请日期 |
2015.03.10 |
| 申请人 |
CORIANT ADVANCED TECHNOLOGY, LLC |
发明人 |
BAEHR-JONES, THOMAS;ZHANG, YI;HOCHBERG, MICHAEL J.;NOVACK, ARI |
| 分类号 |
H01L31/028;G01J1/42;H01L31/0352;H01L31/107 |
主分类号 |
H01L31/028 |
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