| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a built-in SRAM with a thin film BOX-SOI structure, capable of switching between an active state and a standby state while data is retained.SOLUTION: An intermediate mode is set between an active mode in which a threshold voltage is low and a standby mode in which the threshold voltage is high. In transition from the active mode to the standby mode, the threshold voltage is increased temporarily from the threshold voltage in the active mode to that in the intermediate mode, and then increased from the threshold voltage in the intermediate mode to that in the standby mode. In transition from the standby mode to the active mode, the threshold voltage is reduced temporarily from the threshold voltage in the standby mode to that in the intermediate mode, and then reduced from the threshold voltage in the intermediate mode to that in the active mode. |
