METHOD FOR MAKING A SEMICONDUCTOR DEVICE WHILE AVOIDING NODULES ON A GATE

摘要

A method for making a semiconductor device includes forming laterally spaced-apart semiconductor fins above a substrate, and a gate overlying the semiconductor fins. The gate has a tapered outer surface. A first pair of sidewall spacers is formed adjacent the gate an exposed tapered outer surface is also defined. Portions of the gate are removed at the exposed tapered outer surface to define a recess. A second pair of sidewall spacers is formed covering the first pair of sidewall spacers and the recess. Source/drain regions are formed on the semiconductor fins.

主权项

1. A method for making a semiconductor device comprising:
forming, above a substrate, a plurality of laterally spaced-apart semiconductor fins; forming a gate overlying the plurality of semiconductor fins and having a tapered outer surface; forming a first pair of sidewall spacers adjacent the gate and defining an exposed tapered outer surface; removing portions of the gate at the exposed tapered outer surface to define a recess; forming a second pair of sidewall spacers covering the first pair of sidewall spacers and the recess; and forming source/drain regions on the plurality of semiconductor fins.