MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

The performance of a solid state image sensor which is formed by performing divided exposure that exposes the entire chip by a plurality of times of exposure and in which each of a plurality of pixels arranged in a pixel array portion has a plurality of photodiodes is improved.;In the divided exposure performed when the solid state image sensor is manufactured, a dividing line that divides an exposure region is defined to be located between a first photodiode and a second photodiode aligned in a first direction in an active region in a pixel and is defined to be along a second direction perpendicular to the first direction.

主权项

1. A manufacturing method of a semiconductor device including a solid state image sensor having a plurality of pixels containing a first photodiode and a second photodiode, the manufacturing method comprising the steps of:
(a) preparing a substrate including a first region and a second region adjacent to each other in an upper surface of the substrate; (b) forming a photoresist film over the substrate; (c) exposing the photoresist film in the first region; (d) exposing the photoresist film in the second region; (e) after the step (c) and the step (d), patterning the photoresist film by developing the photoresist film; (f) forming an element isolation structure, which partitions an active region in the pixels in the substrate, over the substrate by using the photoresist film patterned in the step (e); and (g) after the step (f), forming the first photodiode in the first region and forming the second photodiode in the second region by introducing impurities into the upper surface of the substrate in the active region, wherein the first photodiode and the second photodiode are separated from each other with a boundary between the first region and the second region in between.