| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus which allows a plurality of raw material gas to react in which attaching/detaching workability of a raw material gas nozzle, and repeatability of a nozzle position is increased.SOLUTION: A vapor phase growth apparatus has: a reactor having a reaction zone where crystal is allowed to grow on a substrate by making a plurality of raw material gas react; a support base which rotatably supports the substrate disposed in the reaction zone; a first raw material supply part which is disposed outside the reactor and supplies first raw material gas; a second raw material supply part which is disposed outside the reactor and supplies second raw material gas; a first raw material gas introduction pipe which introduces the first raw material gas from the first raw material supply part to the reaction zone; and a second raw material gas introduction pipe which introduces the second raw material gas from the second raw material supply part to the reaction zone, and the first raw material gas introduction pipe has a detachable first junction part between the first raw material supply part and a blowout port of the first raw material gas introduction pipe, and the first junction part is a taper-shaped junction part. |
