QUANTUM WELL FIN-LIKE FIELD EFFECT TRANSISTOR (QWFINFET) HAVING A TWO-SECTION COMBO QW STRUCTURE

摘要

The present disclosure provides a quantum well fin field effect transistor (QWFinFET). The QWFinFET includes a semiconductor fin over a substrate and a combo quantum well (QW) structure over the semiconductor fin. The combo QW structure includes a QW structure over a top portion of the semiconductor fin and a middle portion of the semiconductor fin. The semiconductor fin and the QW comprise different semiconductor materials. The QWFinFET also includes a gate stack over the combo QW structure.

主权项

1. A quantum well fin field effect transistor (QWFinFET) comprising:
a semiconductor fin over a substrate; a combo quantum well (QW) structure over the substrate, the combo QW structure including:
a QW structure wrapping over a top portion of the semiconductor fin; anda middle portion of the semiconductor fin that is not covered by the QW structure, wherein the semiconductor fin and the QW structure comprise different semiconductor materials; and a gate stack wrapping over the combo QW structure.