METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device includes forming an inter-metal dielectric layer including a first trench and a second trench which are spaced from each other on a substrate, forming a first dielectric layer along the sides and bottom of the first trench, forming a second dielectric layer along the sides and bottom of the second trench, forming first and second lower conductive layers on the first and second dielectric layers, respectively, forming first and second capping layers on the first and second lower conductive layer, respectively, performing a heat treatment after the first and second capping layers have been formed, removing the first and second capping layers and the first and second lower conductive layers after performing the heat treatment, and forming first and second metal gate structures on the first and second dielectric layers, respectively.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming an inter-metal dielectric layer having a first trench and a second trench which are spaced from each other, on a substrate, whereby each of the trenches has sides and a bottom; forming a first dielectric layer along the sides and bottom of the first trench; forming a second dielectric layer along the sides and bottom of the second trench; forming a first lower conductive layer and a second lower conductive layer respectively on the first dielectric layer and the second dielectric layer; forming a first capping layer and a second capping layer respectively on the first lower conductive layer and the second lower conductive layer; performing a heat treatment after the first and second capping layers have been formed; removing the first and second capping layers and the first and second lower conductive layers after performing the heat treatment; and forming first and second metal gate structures respectively on the first and second dielectric layers.