| 发明名称 |
Device Isolation for III-V Substrates |
| 摘要 |
Techniques for device isolation for III-V semiconductor substrates are provided. In one aspect, a method of fabricating a III-V semiconductor device is provided. The method includes the steps of: providing a substrate having an indium phosphide (InP)-ready layer; forming an iron (Fe)-doped InP layer on the InP-ready layer; forming an epitaxial III-V semiconductor material layer on the Fe-doped InP layer; and patterning the epitaxial III-V semiconductor material layer to form one or more active areas of the device. A III-V semiconductor device is also provided. |
| 申请公布号 |
US2015357417(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201414298421 |
申请日期 |
2014.06.06 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Basu Anirban;Cohen Guy M. |
| 分类号 |
H01L29/205;H01L21/3065;H01L29/06;H01L21/02 |
主分类号 |
H01L29/205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a III-V semiconductor device, the method comprising the steps of:
providing a substrate having an indium phosphide-ready layer; forming an iron-doped indium phosphide layer on the indium phosphide-ready layer; forming an epitaxial III-V semiconductor material layer on the iron-doped indium phosphide layer; and patterning the epitaxial III-V semiconductor material layer to form one or more active areas of the device. |
| 地址 |
Armonk NY US |
