发明名称 GROUND-LOSS DETECTION CIRCUIT
摘要 A ground-loss detection circuit for an integrated circuit, (IC) device including a first dynamic threshold metal oxide semiconductor (DTMOS) device operably coupled between a first ground plane of the IC device and at least one further ground plane of the IC device, at least one of the first and at least one further ground planes comprising an external ground connection of the IC device, at least one further DTMOS device operably coupled between the first and at least one further ground planes of the IC device in an opposing manner to the first DTMOS device, and at least one ground-loss detection component operably coupled to at least one of the first and at least one further DTMOS devices and arranged to detect a ground-loss for at least one of the first and at least one further ground planes based at least partly on a drain current of the at least one of the first and at least one further DTMOS device(s).
申请公布号 US2015355260(A1) 申请公布日期 2015.12.10
申请号 US201314759204 申请日期 2013.01.10
申请人 FRANCHINI Christelle;HUOT-MARCHAND Alexis 发明人 FRANCHINI CHRISTELLE;HUOT-MARCHAND ALEXIS
分类号 G01R31/04;G01R31/28 主分类号 G01R31/04
代理机构 代理人
主权项 1. A ground-loss detection circuit for an integrated circuit (IC) device; the ground-loss detection circuit comprising: a first dynamic threshold metal oxide semiconductor (DTMOS) device operably coupled between a first ground plane of the IC device and at least one further ground plane of the IC device, at least one of the first and at least one further ground planes comprising an external ground connection of the IC device; at least one further DTMOS device operably coupled between the first and at least one further ground planes of the IC device in an opposing manner to the first DTMOS device; and at least one ground-loss detection component operably coupled to at least one of the first and at least one further DTMOS devices and arranged to detect a ground-loss for at least one of the first and at least one further ground planes based at least partly on a drain current of the at least one of the first and at least one further DTMOS device(s).
地址 Fontenilles FR